2006

  • N. Jiang, Z. Ma, "Base–Region Optimization of SiGe HBTs for High-Frequency Microwave Power Amplification", IEEE Transactions on Electron Devices, 53, 4 (2006)

  • G. Wang, H. Yuan, Z. Ma, "Ultrahigh-Performance 8-GHz SiGe Power HBT", IEEE Electron Device Letters, 27, 5 (2006)

  • H. Yuan, M. M. Roberts, D. E. Savage, M. G. Lagally, Z. Ma, "High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers", Journal of Applied Physics, 100, 013708 (2006)

  • H. Yuan, Z. Ma, "Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate", Applied Physics Letters, 89, 212105 (2006)

  • P. K. L. Chan, K. P. Pipe, G. Qin, Z. Ma, "Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors", Applied Physics Letters, 89, 233521 (2006)

2005 and before

  • Z. Ma, N. Jiang, G. Wang, S. A. Alterovitz, "An 18 GHz, 300 mW SiGe power HBT", IEEE Electron Device Letters, 26(6), pp. 381-383, June 2005

  • Z. Ma, N. Jiang, "On the operation configuration of SiGe HBTs based on power gain analysis", IEEE Transactions on Electron Devices, 52(2), pp. 248-255, February 2005

  • N. Jiang, Z. Ma, G. Wang, P. Ma, M. Racanelli, "3-W SiGe power HBTs for wireless applications", Elsevier Science: Materials Science in Semiconductor Processing, 8(1-3), pp. 323-326, 2005

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, "A high power and high gain X-band Si/SiGe/Si heterojunction bipolar transistor", IEEE Trans. on Microwave Theory and Techniques, 50(4), pp. 1101-1108, April 2002

  • Z. Ma, P. Bhattacharya, J.-S. Rieh, G. E. Ponchak, S. A. Alterovitz, E. T. Croke, "Reliability of microwave SiGe/Si heterojunction bipolar transistors", IEEE Microwave and Wireless Components Letters, 11(10), pp. 401-403, October 2001

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, K. M. Strohm, J.-F. Luy, "Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors", Electronics Letters, 37(18), pp. 1140-1142, August 2001

  • Z. Ma, S. Mohammadi, L.-H. Lu, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, "An X-band high-power amplifier using SiGe/Si HBT and lumped passive components", IEEE Microwave and Wireless Components Letters, 11(7), pp. 287-289, July 2001

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, G. E. Ponchak, "High power X-band (8.4GHz) SiGe/Si heterojunction bipolar transistor", Electronics Letters, 37(12), pp. 790-791, June 2001

  • O. Qasaimeh, Z. Ma, P. Bhattacharya, E. T. Croke, "Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays", Journal of Lightwave Technology, 18(11), pp. 1548-1553, November 2000

  • G. S. Was, H. Ji, Z. Ma, "Texture control in thin films using ion bombardment", Texture and Microstructures, 34, pp. 105-118, 2000

  • Z. Ma, G. S. Was, "Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition", Journal of Materials Research, 14(10), pp. 4051-4061, October, 1999

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