2018

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  1. D. Liu*, S. J. Cho*, J.-H. Seo*, K. Kim, M. Kim, J. Shi, X. Yin, W. Choi, C. Zhang, J. Kim, M. A. Baboli, J. Park, J. Bong, I.-K. Lee, J. Gong, H. Zhang, S. Mikael, J. H. Ryu, P. K. Mohseni, X. Liu, S. Gong, X. D. Wang, and Z. Ma, “Lattice mismatched semiconductor heterostructures,” http://arxiv.org/abs/1812.10225 .

  2. Y. H. Jung, H. Zhang, I.-K. Lee, J. H. Shin, T.-I. Kim and Z. Ma, “Releasable high-performance GaAs Schottky diodes for gigahertz operation of flexible bridge rectifier,” Advanced Electronic Materials, 1800772 (2018).  DOI: 10.1002/aelm.201800772 .

  3. Q. Zheng, R. Xie, L. Fang, Z. Cai, Z. Ma, and S. Gong, “Oxygen-deficient and nitrogen-doped MnO2 nanowire-reduced graphene oxide-cellulose nanofibril aerogel electrodes for high-performance asymmetric supercapacitors,” Journal of Materials Chemistry A, DOI: 10.1039/C8TA09374A

  4. R. Wang, Q. Ma, H. Zhang, Z. Ma, R. Yang, and J. Y. Zhu, “Producing conductive graphene–nanocellulose paper in one-pot,” Journal of Polymers and The Environment, DOI: 10.1007/s10924-018-1330-4

  5. M. M. Hussain, Z. Ma and S. F. Shaikh, “Flexible and stretchable electronics – progress, challenges, and prospects,” Interface, winter, 67-71, (2018).

  6. H. Kim, I.-K. Lee, K. Taylor, K. Richters, D.-H. Baek, J. H. Ryu, S. J. Cho, Y. H. Jung, D.-W. Park, J. Novello, J. Bong, A. J. Suminski, A. M. Dingle, R. H. Blick, J. C. Williams, E. W. Dent, and Z. Ma, “Single-neuronal cell culture and monitoring platform using a fully transparent microfluidic DEP device,” Scientific Reports, 8, 13194 (2018) . DOI:10.1038/s41598-018-31576-2.

  7. Y. H. Jung*, M. J. Phillips*, J. Lee, R. Xie, A. L. Ludwig, G. Chen, Q. Zheng, T. J. Kim, H. Zhang, P. Barney, J. Min, K. Barlow, S. Gong, D. M. Gamm, and Z. Ma, “Three-dimensional micro-structured scaffolds to support photoreceptor polarization and maturation,” Advanced Materials, 1803550, (2018). DOI: 10.1002/adma.201803550 Supplementary

  8. D. Liu*, S. J. Cho*, J. Park*, J. Gong, J.-H. Seo, R. Dalmau, D. Zhao, K. Kim, M. Kim, A. R. K. Kalapala, J. D. Albrecht, W. Zhou, B. Moody, and Z. Ma, “226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection,” Applied Physics Letters, 113, 011111 (2018). DOI: 10.1063/1.5038044 Supplemental

  9. M. Kim, S. Yi, J. D. Kim, X. Yin, J. Li, J. Bong, D. Liu, S.-C. Liu, A. Kvit, W. Zhou, X. D. Wang, Z. Yu, Z. Ma, and X. Li, “Enhanced performance of Ge photodiodes via monolithic antireflection texturing and a-Ge self-passivation by inverse metal-assisted chemical etching,” ACS Nano DOI: 10.1021/acsnano.8b01848

  10. S.-C. Liu, D. Zhao, X. Ge. C. Reuterskiöld-Hedlund, M. Hammar, S. Fan, Z. Ma, and W. Zhou, “Lateral size scaling of photonic crystal surface emitting lasers on silicon substrates,” Photonics Journal, 10, 1-6 (2018). DOI: 10.1109/JPHOT.2018.2829900 

  11. C. Liu, H. Lü, T. Yang, Y. Zhang, Y. Zhang, D. Liu, Z. Ma, W. Yu, and L. Guo, “Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate,” Applied Surface Science, 444, 474-479, (2018). https://doi.org/10.1016/j.apsusc.2018.03.099 

  12. D. Liu*, S. J. Cho*, J. Park*, J.-H. Seo, R. Dalmau, D. Zhao, K. Kim, M. Kim, I.-K. Lee, J. D. Albrecht, W. Zhou, B. Moody, and Z. Ma, “229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection,” Applied Physics Letters, 112, 081101 (2018). DOI: 10.1063/1.5011180 Supporting Information

  13. F. Yasar, W. Fan, and Z. Ma, “Flexible amorphous GeSn MSM photodetectors,” IEEE Photonics Journal,  10, 1-9 (2018). DOI: 10.1109/JPHOT.2018.2804360

  14. D.-W. Park*, J. P. Ness*, S. K. Brodnick, C. Esquibel, J. Novello, F. Atry, D.-H. Baek, H. Kim, J. Bong, K. I. Swanson, A. J. Suminski, K. J. Otto, R. Pashaie, J. C. Williams, and Z. Ma, “Electrical neural stimulation and simultaneous in vivo monitoring with transparent graphene electrode arrays implanted in GCaMP6f mice,” ACS Nano, 12, 148-157, (2018). DOI: 10.1021/acsnano.7b04321 Supporting Information.

  15. T. J. Kim*, Y. H. Jung*, H. Zhang, K. Kim, J. Lee, and Z. Ma, “Photolithography-based nanopatterning using re-entrant photoresist profile,” ACS Applied Materials and Interfaces, DOI: 10.1021/acsami.7b17628

  16. H. Mi, S. Mikael, J.-H. Seo, T. Allen, K. Sridharan, D. P. Butt, S. Gong, S. M. McDeavitt, J. P. Blanchard, and Z. Ma, “Detecting the oxidation of zircaloy claddings by infrared interference,” Nano, DOI: 10.1142/S1793292018500157. https://doi.org/10.1142/S1793292018500157 

  17. K. Xiong, H. Mi, T.-H. Chang, Z. Xia, D. Liu, M.-Y. Wu, X. Yin, S. Gong, W. Zhou, J. C. Shin, X. Li, M. Arnold, X. Wang, H.-C. Yuan and Z. Ma, “AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print transfer-assisted direct bonding,” Energy Science and Engineering, 6, 47-55, (2018). DOI: 10.1002/ese3.182.

  18. M. Kim, S. J. Cho, H. Mi, S. Mikael, J. U. Yoon, and Z. Ma, “Fabrication of Ge-on-insulator wafers by Smart-Cut with thermal management for undamaged donor Ge wafers,” Semiconductor Science and Technology, 33, 015017 (2018).

  19. K. Kim, M. Hua†, D. Liu†, J. Kim, K. J. Chen, and Z. Ma, “Efficiency enhancement of InGaN/GaN blue LEDs with top surface deposition of AlN/Al2O3,” Nano Energy, 43, 259-269, (2018). http://dx.doi.org/10.1016/j.nanoen.2017.11.047 

  20. M. E. Robinson, J. D. Ng. H. Zhang, J. T. Buchman, O. A. Shenderova, C. L. Haynes, Z. Ma, R. H. Goldsmith, and R. J. Hamers, “Optically detected magnetic resonance for selective imaging of diamond nanoparticles ,” Analytical Chemistry, 90, 769-776 (2018). DOI: 10.1021/acs.analchem.7b03157

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