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2022

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  1. J. Gong, Z. Zheng, D. Vincent, J. Zhou, J. Kim, D. Kim, T. K. Ng, B. S. Ooi, K. J. Chen, and Z. Ma, “Interfacial band parameters of ultrathin ALD-Al2O3, ALD-HfO2, and PEALD-AlN/ALD-Al2O3 on c-plane, Ga-face GaN through XPS measurements,” Journal of Applied Physics, 132, 135302 (2022). DOI: 10.1063/5.0106485

  2. J. Kim, W. Lin, J. Gong, S. Lal, D. Vincent, S. Cho, D. Kim, and Z. Ma, “Low contact-resistivity and high-uniformity Ni/Au Ohmic contacts on p+ Si nanomembranes via low-temperature rapid thermal annealing,” Materials Science for Semiconductor Processing, 151, 106988 (2022). DOI: 10.1016/j.mssp.2022.106988

  3. C. Chen, Y. Zhou, W. Xie, T. Meng, X. Zhao, Z. Pang, Q. Chen, D. Liu, R. Wang, V. Yang, H. Zhang, H. Xie, U. H. Leiste, W. L. Fourney, S. He, Z. Cai, Z. Ma, T. Li, and L. Hu, “Lightweight, thermally insulating, fire-proof graphite-cellulose foam,” Advanced Functional Materials, 2204219, (2022). DOI: 10.1002/adfm.202204219

  4. X. Yang, J. Liu, Z. Huang, Z. Ma, and G. Qin, “Investigation of effective stress imposed on flexible single-crystalline semiconductor nanomembrane electronics under bending conditions,” Modern Physics Letters B, 36, 2250030 (2022).

  5. T.-L. Liu, Y. Dong, S. Chen, J. Zhou, Z. Ma, and J. Li, “Battery-free, tuning circuit inspired wireless sensor systems for detection of multiple biomarkers in bodily fluids,” Science Advances,8, eabo7049 (2022). DOI: 10.1126/sciadv.abo7049

  6. D.-W. Park, G. Tsvid, J. P. Hernandez-Ortiz, D. C. Schwartz, and Z. Ma, “Trench field-effect transistors integrated in a microfluidic channel and design considerations for charge detection,” Applied Physics Letters, 120, 192102 (2022). DOI: 10.1063/5.0084758 Editor’s Pick.

  7. G. Qin, Y. H. Jung, H. Zhang, N. Jiang, P. Ma, S. Stetson, M. Racanelli, and Z. Ma, “Microwave flexible electronics directly transformed from foundry-produced, multilayered monolithic integrated circuits,” Advanced Electronic Materials, 2101350 (2022). DOI: 10.1002/aelm.202101350

  8. Y. Wei, K. Lan, Z. Wang, J. Wei, Z. Ma, and G. Qin, “Investigation on the performance dependence of proton radiated SiGe HBTs with emitter area and temperature,” Modern Physics Letter B, 36(03), 2150559 (2022). DOI: 10.1142/S021798492150559X

  9. J. Gong, J. Kim, T. K. Ng, K. Lu, D. Kim, J. Zhou, D. Liu, J. Kim, B. S. Ooi, and Z. Ma, “Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors,” arXiv:2109.04597, (2021).

  10. J. Gong, K. Lu, J. Kim, T. K. Ng, D. Kim, J. Zhou, D. Liu, J. Kim, B. S. Ooi, and Z. Ma, “Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN,” Japanese Journal of Applied Physics, 61, 011003 (2022). DOI: 10.35848/1347-4065/ac3d45

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