
2022
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J. Gong, Z. Zheng, D. Vincent, J. Zhou, J. Kim, D. Kim, T. K. Ng, B. S. Ooi, K. J. Chen, and Z. Ma, “Interfacial band parameters of ultrathin ALD-Al2O3, ALD-HfO2, and PEALD-AlN/ALD-Al2O3 on c-plane, Ga-face GaN through XPS measurements,” Journal of Applied Physics, 132, 135302 (2022). DOI: 10.1063/5.0106485
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J. Kim, W. Lin, J. Gong, S. Lal, D. Vincent, S. Cho, D. Kim, and Z. Ma, “Low contact-resistivity and high-uniformity Ni/Au Ohmic contacts on p+ Si nanomembranes via low-temperature rapid thermal annealing,” Materials Science for Semiconductor Processing, 151, 106988 (2022). DOI: 10.1016/j.mssp.2022.106988
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C. Chen, Y. Zhou, W. Xie, T. Meng, X. Zhao, Z. Pang, Q. Chen, D. Liu, R. Wang, V. Yang, H. Zhang, H. Xie, U. H. Leiste, W. L. Fourney, S. He, Z. Cai, Z. Ma, T. Li, and L. Hu, “Lightweight, thermally insulating, fire-proof graphite-cellulose foam,” Advanced Functional Materials, 2204219, (2022). DOI: 10.1002/adfm.202204219
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X. Yang, J. Liu, Z. Huang, Z. Ma, and G. Qin, “Investigation of effective stress imposed on flexible single-crystalline semiconductor nanomembrane electronics under bending conditions,” Modern Physics Letters B, 36, 2250030 (2022).
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T.-L. Liu, Y. Dong, S. Chen, J. Zhou, Z. Ma, and J. Li, “Battery-free, tuning circuit inspired wireless sensor systems for detection of multiple biomarkers in bodily fluids,” Science Advances,8, eabo7049 (2022). DOI: 10.1126/sciadv.abo7049
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D.-W. Park, G. Tsvid, J. P. Hernandez-Ortiz, D. C. Schwartz, and Z. Ma, “Trench field-effect transistors integrated in a microfluidic channel and design considerations for charge detection,” Applied Physics Letters, 120, 192102 (2022). DOI: 10.1063/5.0084758 Editor’s Pick.
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G. Qin, Y. H. Jung, H. Zhang, N. Jiang, P. Ma, S. Stetson, M. Racanelli, and Z. Ma, “Microwave flexible electronics directly transformed from foundry-produced, multilayered monolithic integrated circuits,” Advanced Electronic Materials, 2101350 (2022). DOI: 10.1002/aelm.202101350
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Y. Wei, K. Lan, Z. Wang, J. Wei, Z. Ma, and G. Qin, “Investigation on the performance dependence of proton radiated SiGe HBTs with emitter area and temperature,” Modern Physics Letter B, 36(03), 2150559 (2022). DOI: 10.1142/S021798492150559X
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J. Gong, J. Kim, T. K. Ng, K. Lu, D. Kim, J. Zhou, D. Liu, J. Kim, B. S. Ooi, and Z. Ma, “Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors,” arXiv:2109.04597, (2021).
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J. Gong, K. Lu, J. Kim, T. K. Ng, D. Kim, J. Zhou, D. Liu, J. Kim, B. S. Ooi, and Z. Ma, “Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN,” Japanese Journal of Applied Physics, 61, 011003 (2022). DOI: 10.35848/1347-4065/ac3d45