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Welcome to visit the homepage of
WISconsin Nano Engineering Device (WISNED) Lab!

Our work focuses on the advancement of 3D-semiconductor heterostructures from the fundamental level toward practical applications by employing the most diverse types of semiconductors in the world. We are actively conducting the following research:

  • Large lattice mis-matched semiconductor heterostructures: materials, physics, and device applications.

  • We stand on the shoulders of Herbert Kroemer and Zhores I. Alferov, who "developed semiconductor heterostructures used in high-speed- and opto-electronics", and Shuji Nakamura, Isamu Akasaki, and Isamu Akasaki, who "invented efficient blue light-emitting diodes" employing nitride heterostructures.

  • We break the physics restrictions of lattice match/minor mismatch to form high quality abrupt heterostructures by providing a brand-new approach that enables the fabrication of arbitrary-lattice heterostructures: Semiconductor Grafting.

  • Based on the grafting principles, we  investigate unusual combinations of semiconductors to form exotic abrupt heterostructures that cannot be formed via conventional epitaxy or wafer bonding/fusion techniques between the following materials: Si, Ge, SiGeSnPb (all alloys), AlGaAsInP (all binary, ternary, and quaternary), ScAlGaInN (all binary, ternary, and quaternary), SiC, diamond (C^sp3), (Al)Ga2O3, all II-VIs, and all perovskites.

  • We presently work on grafted ultrawide bandgap (UWBG) heterostructures, which include ScAlGaInN, diamond, Ga2O3, and their device applications.

  • We also work on very narrow bandgap semiconductor heterostructures and applications, including SiGeSnPb based heterostructures for optoelectronic applications.

  • We aim to demonstrate many more classes (20 new pairs accomplished!) of practical 3D semiconductors-based heterostructures beyond the societally impactful Si-class, GaAs-class, InP-class, and nitrides-class heterostructures.

  • With the new heterostructures, we aim to greatly enhance the performance metrics of all existing applications and to create new high-impact applications.

 

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The four classes of lattice-matched heterostructures via epitaxy have deeply impacted our world. They are Si-, GaAs-, InP-, and Nitrides-based heterostructures.
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Breaking the limitation of lattice match, many more classes of semiconductor heterostructures will become available. The above lines drawn in the figure indicate a few sets of semiconductor heterostructures that have been identified to be potentially impactful. Theoretically, hundreds or even thousands of new heterostructures may be created, many of which may be worth investigating to cultivate new applications.
Join us on the exciting research!
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