Our work focuses on the advancement of 3D-semiconductor heterostructures from the fundamental level toward practical applications by employing the most diverse types of semiconductors in the world. We are actively conducting the following research:

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• Large lattice mis-matched semiconductor heterostructures: materials, physics, and device applications.

• We stand on the shoulders of Herbert Kroemer and Zhores I. Alferov, who "developed semiconductor heterostructures used in high-speed- and opto-electronics", and Shuji Nakamura, Isamu Akasaki, and Isamu Akasaki, who "invented efficient blue light-emitting diodes" employing nitride heterostructures.

• We break the physics restrictions of lattice match/minor mismatch to form high quality abrupt heterostructures by providing a brand-new approach that enables the fabrication of arbitrary-lattice heterostructures: Semiconductor Grafting.

• Based on the grafting principles, we  investigate unusual combinations of semiconductors to form exotic abrupt heterostructures that cannot be formed via conventional epitaxy or wafer bonding/fusion techniques between the following materials: Si, Ge, SiGeSnPb (all alloys), AlGaAsInP (all binary, ternary, and quaternary), ScAlGaInN (all binary, ternary, and quaternary), SiC, diamond (C^sp3), (Al)Ga2O3, all II-VIs, and all perovskites.

• We presently work on grafted ultrawide bandgap (UWBG) heterostructures, which include ScAlGaInN, diamond, Ga2O3, and their device applications.

• We also work on very narrow bandgap semiconductor heterostructures and applications, including SiGeSnPb based heterostructures for optoelectronic applications.

• We aim to demonstrate many more classes (20 new pairs accomplished!) of practical 3D semiconductors-based heterostructures beyond the societally impactful Si-class, GaAs-class, InP-class, and nitrides-class heterostructures.

• With the new heterostructures, we aim to greatly enhance the performance metrics of all existing applications and to create new high-impact applications.