We break the physics restrictions of lattice match/minor mismatch to form high quality abrupt heterostructures by providing a brand-new approach that enables the fabrication of arbitrary-lattice heterostructures: Semiconductor Grafting.
Breaking the limitation of lattice match, many more classes of semiconductor heterostructures will become available. The lines drawn in the figure indicate a few sets of semiconductor heterostructures that have been identified to be potentially impactful. Theoretically, hundreds or even thousands of new heterostructures may be created, many of which may be worth investigating to cultivate new applications.
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Based on the grafting principles, we investigate unusual combinations of semiconductors to form exotic abrupt heterostructures that cannot be formed via conventional epitaxy or wafer bonding/fusion techniques between the following materials: Si, Ge, SiGeSnPb (all alloys), AlGaAsInP (all binary, ternary, and quaternary), ScAlGaInN (all binary, ternary, and quaternary), SiC, diamond (C^sp3), (Al)Ga2O3, all II-VIs, and all perovskites.
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